Light & Engineering 31 (3)

Volume 31
Date of publication 06/13/2023
Pages 91–99

The Interrelation between Temperature and Power Supply Modes of Low Power High Efficiency Light Emitting Diodes L&E, Vol.31, No.3, 2023

Articles authors:

Dmitry O. Varlamov, Feodor I. Manyakhin, Arkady A. Skvortsov

Dmitry O. Varlamov, engineer. He graduated from Moscow Machinery Engineering University in 2005. Currently he is the Senior Lecturer at the Electric Equipment and Industrial Electronics sub-department of Moscow Polytechnic University, author and co-author of more than 40 publications. His research interests are microcontroller systems, light emitting diodes

Feodor I. Manyakhin, Doctor of Physical and Mathematical Sciences, Professor. In 1973, he graduated from the Moscow Institute of Electronic Engineering (MIEM). At present, he is Professor of the Automatic Design sub-department of NITU MISiS, author and co-author of more than 160 publications. Dr. Manyakhin awarded with diploma of the Ministry of Education and Science of Russia, prize winner of the Golden Names of Higher Education 2018 contest in nomination of Contribution to Science and Higher Education. His research interests are semiconductor electronics, physics of semiconductor devices

Arkady A. Skvortsov, Doctor of Physical and Mathematical Sciences. Currently he is a Head of sub-department of Moscow Polytechnic University, author and co-author of more than 150 articles and monographs on semiconductor material studies and problems of degrading of metallisation systems and contacts in micro and nano electronic systems

Abstract:

The studies of interrelation between temperature and power supply modes of low power high efficiency light emitting diodes and the effect of temperature on their direct voltage were analysed. It is discovered that there are significant differences in the experimental data on temperature modes obtained by many authors. A new dynamic method of measurement of overheating temperature in the active region of p-n structures at pre-set direct current is applied. This method is based on registration of the transient processes of direct voltage changes during heating by pre-set current and cooling-down after switching-off of the heating current at constant low direct current. The formula is obtained for calculation of the proportion factor of direct-voltage temperature dependence for diodes with different techno structures accounting for the measurement current, the non-ideality factor of the voltage-current curve, and temperature. The experimental curves of the LED active region temperature dependence on heating current at its density of (10–110) A/cm2 and dissipated power of (0.025–0.45) W are obtained. The direct-voltage temperature dependence proportion factor was modelled at different values of measurement current for specific LEDs. It is demonstrated that the active region of LEDs based on wide-band-gap semiconductors overheats due to formation of hot charge carriers interacting with optic phonons in it at current densities, when the exponential nature of the voltage-current curve is disturbed.

References:

1. Nikiforov, S. Temperature in the Life and Operation of Light Emitting Diodes. Part I [Temperatura v zhizni i rabote svetodiodov. Chast I] // Komponenty i tekhnologii., 2005, Vol. 9, pp. 140–146.
2. Chhajed, S., Xi, Y., Gessmann, Th., X, i J.-Q., Shah, J.M., Kim, J.K., Shubert, E.F. et. al. Junction temperature in light-emitting diodes assessed by different methods // Proc., 2005, Vol. 5739 (Light-Emitting Diodes: Research, Manufacturing and Applications IX). Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States.
3. Xi, Y., Xi, J.-Q., Gessmann, Т., Shah, J.М., Кim, J.К., Schubert, Е.F., Fische, r А.J., Crawford, М.Н., Bogart, К.Н.А., Allerman, А.А. Junction temperature measurements in deep-UV light-emitting diodesю // Appl. Phys. Lett., 2005, Vol. 86, # 031907.
4. Goncharova, Yu.S., Garipov, I.F., Soldatkin, V.S. Accelerated Durability Tests of Semiconductor Light Sources [Uskorennyye ispytaniya poluprovodnikovykh istochnikov sveta na dolgovechnost] // TUSUR University Proceedings, 2013, Vol. 2, # 28, pp. 51–53.
5. Dokhturov, V.V., Smirnov, S.V. Crystal Heat Mode Control in LED Lamps [Kontrol teplovogo rezhima kristallov v svetodiodnykh lampakh] // Poluprovodnikovaya svetotekhnika, 2012, Vol. 5, pp. 37–39.
6. Goncharova, Yu.S., Romanova, M.A., Smirnov, S.V. Spectral Method of Non-contact Measurement of Crystal Temperature of Semiconductor Light Sources [Spektralnyi metod beskontaktnogo izmereniya temperatury kristallov poluprovodnikovykh istochnikov sveta] // TUSUR University Proceedings, 2015, Vol. 2, # 6, pp. 38–40.
7. Xi, Y., Shubert, E.F. Junction-temperature measurement in GaN-ultraviolet light-emitting diodes using diode forvard voltage method // Appl. Phys. Lett., 2004, Vol. 85, # 12, pp. 2163–2165.
8. Aladov, А., Chernyakov, А., Zakgeim, А. Infrared micro-thermography of high-power AlInGaN LEDs using high emissivity (black) in IR and transparent in the visible spectral region coating // Quantitative Infrared Thermography Journal. Published online: 23 Apr 2019.
9. Zakgeym, A.L., Kuryshev, G.L., Mizerov, M.N., Polovinkin, V.G., Rozhansky, I.V., Chernyakov, A.E. The Study of Heat Processes in High-Power InGaN/GaN Flip-Chip Light Emitting Diodes Using Infrared Thermal-imaging Microscopy [Issledovaniye teplovykh protsessov v moshchnykh InGaN/GaN flip-chip svetodiodkh c ispolzovaniyem infrakrasnoy teplovizionnoy mikroskopii] // Fizika i tekhnika poluprovodnikov, 2010, Vol. 44, # 3, pp. 390–396.
10. Farkas, G. et al. Electric and Thermal Transient Effects in High Power Optical Devices / 20th IEEE SEMITHERM Symposium, 2004.
11. Thermal management for LED applications / Edited by Lasance, J.M. & Poppe, A. – N.Y.: Springer, 2013, 103 p.
12. Shubert, F.E. Light Emitting Diodes [Svetodiody] / Trans. from Eng. eds. A.E. Yunovich. 2nd ed. – Moscow: FIZMATLIT, 2008, 496 p.
13. Varlamov, D.O., Manyakhin, F.I., Shishkov, A.N., Skvortsov, A.A. Measurement of Metallurgical p–n-Junction Temperature by Dynamics of Current-Induced Heating and Cooling / 2022 International Conference on Industrial Engineering, Applications and Manufacturing (ICIEAM), May, 16–20, 2022.
14. Manyakhin, F.I., Vattana, A.B., Mokretsova, L.O. Application of the Shockley-Noyce-Shah Recombination Model to the Model of Voltage-Current Relationship of LED Structures with Quantum Wells [Primeneniye mekhanizma Shokli, Noisa, Saa dlya modeli volt-ampernoy kharakteristiki svetodiodnykh struktur s kvantovymi yamami] // Svetotekhnika, 2020, Vol. 4, pp. 45–50.
15. Manyakhin, F.I. The Role of the Compensated Layer in Formation of the Voltage-Current Relationship of LEDs Based on Wide Bandgap Semiconductors [Rol kompensirovannogo sloya v formirovanii volt-ampernoy kharakteristiki svetodiodov na osnove shirokozonnykh poluprovodnikov] // Izvestiya vuzov. Materialy elektronnoy tekhniki, 2009, Vol. 3, pp. 51–56.
16. Sah, C.T., Noyce, R.N., Shockley, W. Carrier Generation and Recombination in P–N- Junctions and P–N- Junction Characteristics // Proc. IRE, 1957, Vol. 45, pp. 1228–1243.
17. Varshni, Y.P. Temperature dependence of the energy gap in semiconductors // Physica, 1967, Vol. 34, pp. 149.
18. NSM Archive. Physical Properties of Semiconductors. URL: http://www.ioffe.rssi.ru/SVA/NSM/Semicond/ (date of reference: 20.04.2022).
19. Manyakhin, F.I., Mokretsova, L.O. Modelling the energy structure of a GaN p-i-n junction // Russian Microelectronics, 2018, Vol. 47, pp. 619–623.
20. Pikus, G.E. Basics of the Theory of Semiconductor Devices [Osnovy teorii poluprovodnikovykh priborov]. – Moscow: Nauka, GRFML, 1965, 448 p.
21. Manyakhin, F.I., Mokretsova, L.O. The Pattern of Quantum Yield Reduction in Quantum-Well Light Emitting Diodes with Continuous Current Flow Regarding the ABC Model [Zakonomernost snizheniya kvantovogo vykhoda svetodiodov s kvantovymi yamami pri dlitelnom protekanii toka s pozitsii modeli ABC] // Svetotekhnika, 2021, Vol. 3, pp. 29–35.

Keywords

DOI: https://doi.org/10.33383/2022-048

Article in RUS:
Svetotekhnika # 1, 2023, pp. 24–29

Buy