Light & Engineering 28 (5)

Volume 28
Date of publication 10/16/2020
Pages 31-38

Application Of The Sah-noyce-shockley Recombination Mechanism To The Model Of The Voltagecurrent Relationship Of Led Structures With Quantum Wells Light & Engineering Vol. 28, No. 5

Articles authors:

Feodor I. Manyakhin, Arthur B. Vattana, Lyudmila O. Mokretsova

Feodor I. Manyakhin, Doctor of Physical and Mathematical Sciences, Professor. In 1973, he graduated from the Moscow Institute of Electronic Engineering (MIEM). At present, he is Professor of the Automatic Design sub-department of NITU MISiS, author and coauthor of more than 160 publications. Dr. Manyakhin awarded with diploma of the Ministry of Education and Science of Russia, prize winner of the Golden Names of Higher Education 2018 contest in nomination of Contribution to Science and Higher Education. His research interests are semiconductor electronics, physics of semiconductor devices

Arthur B. Vattana, engineer. In 1999, graduated from the Microelectronics and Semiconductor Devices sub-department of MISIS. At present, he is a Senior lecturer of the Electric Engineering and Information and Measurement Systems subdepartment of NITU MISIS. His research interests: physics of light emitting diodes, experimental studies of LED characteristics

Lyudmila O. Mokretsova, Associate Professor, Ph. D. in Technical Sciences. In 1978, she graduated from the Moscow Institute of Steel and Alloys (MISIS). At present, she is Associate Professor of the Automatic Design sub-department of NITU MISIS, prize winner of the Golden Names of Higher Education 2018 contest in nomination of Introduction of Innovative Teaching Techniques. Her research interests: 3D modelling in light design

Abstract:

The Sah-Noyce-Shockley (SNS) space charge region recombination theory is applied to build the mathematic model of the voltage-current relationships (VCR) of light emitting diodes with quantum wells. Unlike the mathematic model of VCR, for SNS in the proposed model, non-uniformity of recombination centres distribution over the space charge region and dependence of their mean concentration on voltage are assumed as well as the fact that the nonideality factor of forward current dependence on bias voltage may have a continuous series of values from 1 to 5 and is defined by the dependence on bias voltage of both saturation current and exponent of the VCR mathematical model.

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Keywords

DOI: https://doi.org/10.33383/2020-026

Article in RUS:
Svetotekhnika, #4 , 2020, pp. 45–50