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Active Area Temperature Measurement of Medium-Power LEDs by Dynamics Changes in Forward Voltage during Current Heating and Cooling L&E, Vol.31, No.5, 2023

Light & Engineering 31 (5)

Volume 31
Date of publication 10/10/2023
Pages 127–134

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Active Area Temperature Measurement of Medium-Power LEDs by Dynamics Changes in Forward Voltage during Current Heating and Cooling L&E, Vol.31, No.5, 2023
Articles authors:
Feodor I. Manyakhin, Dmitry O. Varlamov, Arkady A. Skvortsov, Ludmila О. Mokretsova, Vladimir K. Nikolaev

Feodor I. Manyakhin, Doctor of Physical and Mathematical Sciences, Professor. In 1973, he graduated from the Moscow Institute of Electronic Engineering (MIEM). At present, he is Professor of the Automatic Design sub-department of NITU MISiS, author and co-author of more than 160 publications. Dr. Manyakhin awarded with diploma of the Ministry of Education and Science of Russia, prize winner of the Golden Names of Higher Education 2018 contest in nomination of Contribution to Science and Higher Education. His research interests are semiconductor electronics, physics of semiconductor devices

Dmitry O. Varlamov, engineer. He graduated from Moscow Machinery Engineering University in 2005. Currently he is the Senior Lecturer at the Electric Equipment and Industrial Electronics sub-department of Moscow Polytechnic University, author and co-author of more than 40 publications. His research interests are microcontroller systems, light emitting diodes

Arkady A. Skvortsov, Doctor of Physical and Mathematical Sciences. Currently he is a Head of sub-department of Moscow Polytechnic University, author and co-author of more than 150 articles and monographs on semiconductor material studies and problems of degrading of metallisation systems and contacts in micro and nano electronic systems

Ludmila О. Mokretsova, Associate Professor, Ph. D. in Technical Sciences. In 1978, she graduated from the Moscow Institute of Steel and Alloys (MISIS). At resent, she is Associate Professor of the Automatic Design subdepartment of NITU MISIS, prize winner of the Golden Names of Higher Education 2018 contest in nomination of Introduction of Innovative Teaching Techniques. Her research interests: 3D modelling in light design

Vladimir K. Nikolaev, Ph. D. in Economics Sciences. At present, he is researcher at the Department of Dynamics, Strength of Machines and Strength of Materials at Moscow Polytechnic University. Author (co-author) of more than 25 scientific articles and monographs on microelectronics and organization of production of enterprises in the instrument-making industry

Abstract:
The most common non-destructive methods of measuring the temperature of the active area of light emitting diodes (LEDs) are briefly analysed and their disadvantages are pointed out. Measurements of the temperature of the active area of medium-power LEDs by the dynamics of change in the direct voltage during heating by currents of different densities and in the process of cooling in the mode of flow of small, so-called measuring current, which not cause heating of LEDs, are presented. An electrical scheme realising the used method is given. The results of measurements show that the thermal resistance of LED, determined by the results of measuring the temperature of the active area by the proposed method, is greater than the reference value. The comparison of the results of temperature measurements using traditional methods of analysing the radiation spectra of LEDs and the temperature dependence of direct voltage is carried out.
References:
1. Meyaard, D.S., Qifeng Shan, Jaehee Cho, Schubert, E.F., Sang-Heon Han, Min-Ho Kim, Cheolsoo Sone, Seung Jae Oh, and Kim, J. K.. Temperature dependent efficiency droop in GaInN light emitting diodes with different current densities //Appl. Phys. Lett., 2012, 100, 081106, https://doi.org/10.1063/1.3688041.
2. Zi-Quan Guo, Tien-Mo Shih, Zhang-Bao Peng, Hai-Hua Qiu, Yi-Jun Lu, Yu-Lin Gao, Li-Hong Zhu, Jiang-Hui Zheng, and Chen, Z. On a relationship among optical power, current density, and junction temperature for InGaN-based light emitting diodes // AIP Advances 7, 015307 (2017); doi: 10.1063/1.4974877; View online: http://dx.doi.org/10.1063/1.4974877.
3. Tetzlaff, T., Mario, A., Ayala B., Witkowski, U. Estimation of LED Junction Temperature Based on Forward Voltage Method for Digital Hardware Implementation // 2016 European Modelling Symposium. DOI 10.1109/EMS.2016.42.
4. Xi, Y., Xi, J.-Q., Gessmann, Т., Shah, J. М., Кim, J. К., Schubert, Е. F., Fischer, А. J., Crawford, М. Н., Bogart, К. Н. А., and Allerman, А.А. Junction temperature measurements in deep-UV light-emitting diodes // Appl. Phys. Lett. 86, 031907 (2005).
5. Ahmet Mete Muslu, Burak Ozluk, Enes Tamdogan, Arik, M. Impact of junction temperature over forward voltage drop for red, blue and green high power light emitting diode chips // 2017, 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems.
6. Varlamov, D.O., Manyakhin, F.I., Skvortsov, A.A. Interrelation of temperature and electrical modes of low-power high-efficiency LEDs // Light & Engineering Journal, 2023, # 3, pp. 91–99.
7. Manyakhin, F.I., Mokretsova, L.O. Physical-Mathematical Model of the Internal Quantum Efficiency Dependence on the Current of LEDs with Quantum Wells // Light & Engineering Journal, 2020, Vol. 28, # 6, pp. 9–16.
8. Voitsekhovsky, A.V., Nesmelov, S.N., Kulchitsky, N.A., Melnikov, A.A. Influence of dislocations on the internal quantum efficiency of light emitting structures based on InGaN/GaN quantum wells [Vliyaniye dislokatsiy na vnutrennyuyu kvantovuyu effektivnost’ svetoizluchayushchikh struktur na osnove kvantovykh yam InGaN/GaN // Nano- i mikrosistemnaya tekhnika] // Nano- and microsystem technology, 2011, # 8, pp. 27–35.
9. Shim, J.-I., Shin, D.-S. Measuring the internal quantum efficiency of light-emitting diodes towards accurate reliable room-temperature characterization // Nanophotonics, 2018, September, pp. 1–5.
10. Pavlyuchenko, A.S. et al. Manifestation of the injection mechanism of the decrease in the efficiency of AlInGaN-based LEDs in the temperature dependence of the external quantum yield [Proyavleniye inzhektsionnogo mekhanizma padeniya effektivnosti svetodiodov na osnove AlInGaN v temperaturnoy zavisimosti vneshnego kvantovogo vykhoda] // FTP [Fizika I Technika Poluprovodnikov], 2009, V. 43, # 10, p. 391.
11. M. Meneghini, C. de Santi, A. Tibaldi et al. Thermal droop in III-nitride based light emitting diodes: Physical origin and perspectives //J. Appl. Phys, 2020, 127, 211102.
12. Titkov, I., Karpov, S.Y., Yadov, A. et al. Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes // IEEE Journal of Quantum Electronics, V. 50, No. 11, November 2014, p. 911
13. Xi, Y. and Schubert, E.F. Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method // Appl. Phys. Lett. V.85, N.12, pp. 2163–2165.
14. Schubert, E.F. LEDs / Translated from English. Ed. A.E. Yunovich, 2nd ed. Moscow, “Fizmatlit”, 2008, 494 p.
15. Manyakhin, F. A., Kovalev, A. and Yunovich, A.E. Aging Mechanisms of InGaN/AlGaN/GaN Light Emitting Diodes Operating at High Currents // MRS Internet Journal Nitride Semiconductor Research, 1998, 3, 53.
16. Kudryashov, V.E., Mamakin, S.S., Turkin, A.N., Yunovich, A.E., Kovalev, A.N., Manyakhin, F.I. Dependence of aging on inhomogeneity in InGaN/AlGaN/GaN light-emitting diodes // MRS Internet Journal of Nitride Semiconductor Research, 2000, V. 5, pp. 668–674.
17. Manyakhin F.I., Mokretsova, L.O. The Regularity of the Decrease in the Quantum Yield of Quantum-Wells LEDs at the Long-Term Current Flow from the ABC Model Position // Light & Engineering Journal, 2021, Vol. 29, # 5(2), pp. 62–70.
18. Meneghini M., Trevisanello, L-R, Zahner, T., Strauss, U., Meneghesso, G., Zanoni, E. High-Temperature degradation of GaN LEDs related to passivation // IEEE Transactions on Electron Dev. 2006, Vol. 53, # 12, pp. 2982–2986.
19. Meneghesso, G., Levada, S., Pierobon, R., Rampazzo, F., Zanoni, E., Cavalini, A., Castalini, A., Scamareio, G., Du, S., Eliashevich, L. Degradation mechanisms on GaN-based LEDs after accelerated DC current aging / Digest. International Electron Devices Meeting, Dec. 8, 2002, pp. 103–105; DOI: 10.1109/IEDM.2002.1175789.
20. Ezhov, V. Standardization and calculation of thermal characteristics of high-power LEDs [Standartizatsiya i raschet teplovykh kharakteristik moshchnykh svetodiodov] // Electronic components [Elektronnyye komponenty], 2009, # 6, pp. 42–48.
21. Shockley, W. The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors // Belt Syst. Tec. J. 1949, Vol. 28, pp. 435–489.
22. Sah, C. T., Noyce, R.N., Shockley, W. Carrier Generation and Recombination in p-n Junctions and p-n Junction Characteristics // Proc. IRE. 1957, Vol. 45, pp. 1228–1243. 23. Manyakhin, F.I., Vattana, A.B. and Mokretsova, L.O. Application of the Sah-Noyce-Shockley Recombination Mechanism to the Model of the Voltage-Current Relationship of LED Structures with Quantum Wells // Light & Engineering Journal, 2020, V. 28, # 5, pp. 31–38.
24. Sergeev, V.A., Shirokov, A.A. Determination of local temperatures in the structures of red AlInGaP/GaAs LEDs in a pulsed mode [Opredeleniye lokal’nykh temperatur v strukturakh krasnykh AlInGaP/GaAs svetodiodov v impul’snom rezhime] // Letters to ZhTF, 2009, Vol. 35, # 9, pp. 1–10.
25. Varshni, У.Р. Temperature dependence of the energy gap in semiconductors // Physics, 1967, V. 34, p.149. DOI:10.1016/0031–8914(67)90062–6 Corpus, ID: 120605623.
26. Delyan, R.A., Erokhin, M.M., Markova, S.N., Potapov, A.S., Savitskaya, A.G., Terekhov, G.P., and Turkin A.N. Choosing a Method for Approximating the Spectral Distribution of Colour LEDs and Comparing their Parameters and Characteristics in Nominal Mode // Light & Engineering Journal, 2023, Vol. 31, # 3, pp. 52–60.
27. Volkov, V.V., Kogan, L.M. Turkin, A.N., Yunovich, A.E. Luminescence spectra of high-power LEDs based on gallium nitride in the ultraviolet and violet regions of the spectrum [Spektry lyuminestsentsii moshchnykh svetodiodov na osnove nitrida galliya v ul’trafioletovoy i fioletovoy oblastyakh spektra] // Journal of Technical Physics, 2018, Vol. 52, # 10, pp. 1172–1176.
28. Kudryashov, V.E., Mamakin, S.S., Turkin, A.N., Yunovich, A.E., Kovalev, A.N., Manyakhin, F.I. Spectra and quantum yield of LEDs with quantum wells based on GaN heterostructures – dependence on current and voltage [Spektry i kvantovyy vykhod izlucheniya svetodiodov s kvantovymi yamami na osnove geterostruktur iz GaN – zavisimost’ ot toka i napryazheniya] // FTP [Fizika i Technika Poluprovodnikov], 2001, Vol. 35, # 7, pp. 861–868.
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