Light & Engineering 34 (4) 2026

Volume 4
Date of publication 08/20/2026
Pages 4–13

Limitations of the ABC Model of Recombination Rates to Describe the Internal Quantum Efficiency of Quantum Well LEDs: A Critical Analysis L&E, Vol.34, No.4, 2026

Articles authors:

Fedor I. Manyakhin, Vladimir P. Budak, Dmitry O. Varlamov, Vladimir K. Nikolaev, Arkady A. Skvortsov

Fedor I. Manyakhin, Doctor of Physical and Mathematical Sciences, Professor. He graduated from the Moscow Institute of Electronics and Mathematics in 1973. Currently, he is a professor at Moscow Polytechnic University, he is the author and co-author of over 180 publications. He has been awarded a Certificate of Honour by the Ministry of Education and Science of the Russian Federation and was a laureate of the Golden Names of Higher Education 2018 competition in the category For Contribution to Science and Higher Education. His research interests include semiconductor electronics and the physics of semiconductor devices

Vladimir P. Budak, Professor, Doctor of Technical Sciences. In 1981, he graduated from the Moscow Power Engineering Institute (MPEI). At present, he is the Editor-in-Chief of the Svetotekhnika / Light & Engineering journals, Professor of the Subdepartment of Light and Engineering in NRU MPEI, Academician of the Academy of Electrotechnical Sciences of Russia

Dmitry O. Varlamov, engineer. He graduated from Moscow State Technical University “MAMI” in 2005 and is currently a Senior Lecturer in the Department of Electrical Equipment and Industrial Electronics at Moscow Polytechnic University. He is the author and coauthor of more than 40 publications. His research interests include microcontroller systems and LED technologies

Vladimir K. Nikolaev, Ph. D. in Economics and Associate Professor, works at the Moscow Polytechnic University. Basic information and activities: Associate Professor, Project Activity Centre, Head of the Scientific and Technical Centre (STC) "Optoelectronics". His Research interests are in the fields of engineering education and project activity. He participates in projects on the development of adaptive optics for laser technologies, micromechanics, and sensorics. Nikolaev V.K. actively promotes issues of integrating the university's project activities with industrial partners, advocating for the creation of systems for the commercialization of intellectual property

Arkady A. Skvortsov, Doctor of Physical and Mathematical Sciences. He is Head of Department at Moscow Polytechnic University and the author or co-author of more than 150 scientific articles and monographs on semiconductor materials science, as well as on the degradation of metallization systems and contact structures in micro- and nanoelectronics

Abstract:

An analysis of the applicability of the ABC recombination model to describing the current dependence of the internal quantum efficiency (IQE) demonstrates its inadequacy. The main criticisms are as follows:
– The use of a secondary parameter for quantum-well device structures, namely the excess carrier concentration, as the argument in the current dependence of IQE, especially under the assumption of equal electron and hole concentrations in the space-charge region;
– Auger recombination and radiative recombination are partial components of a unified inter-band recombination process and therefore cannot be treated as independent processes; – The ABC model unjustifiably ignores the fundamental mechanism of tunneling current formation; – In the ABC model, the origin of the nonradiative current is attributed to the Shockley – Read – Hall recombination mechanism, whereas in the device structure it is governed by the Sah – Noyce – Shockley mechanism.
Based on this critical analysis, it is concluded that an adequate model describing the IQE – current dependence should be developed on the basis of the physical mechanisms governing the fundamental currents in quantum-well device structures:
– The recombination current via defect levels in quantum wells, Jt;
– The inter-band recombination current, JB;
– The tunnelling current, JT.
Such a model should also account for the unified mechanism responsible for the formation of the radiative component of inter-band recombination, (1‑p)・JB, and the nonradiative component, p・Jb, where p is the partition coefficient dependent on JB. A general expression for the current dependence of IQE is proposed as follows:
ηIQE=(1‑p)・ JB /(Jt+JB+JT).

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Keywords

DOI: https://doi.org/10.33383/2026-008

Article in RUS:
Svetotekhnika # 3, 2026, pp. 11–17

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