Light & Engineering 32 (4) 2024

Volume 32
Date of publication 08/15/2024
Pages 59–66

Non-Destructive Method and Device for Measurements of Profile of Doping for the Active Region of the p–n Structure LED Crystals L&E, Vol.32, No.4, 2024

Articles authors:

Feodor I. Manyakhin, Dmitry O. Varlamov, Lyudmila O. Mokretsova, Arkady A. Skvortsov

Feodor I. Manyakhin, Doctor of Physical and Mathematical Sciences, Professor. In 1973, he graduated from the Moscow Institute of Electronic Engineering (MIEM). At present, he is Professor of the Automatic Design sub-department of NITU MISiS, author and coauthor of more than 160 publications. Dr. Manyakhin awarded with diploma of the Ministry of Education and Science of Russia, prize winner of the Golden Names of Higher Education 2018 contest in nomination of Contribution to Science and Higher Education. His research interests are semiconductor electronics, physics of semiconductor devices

Dmitry O. Varlamov, engineer. He graduated from Moscow Machinery Engineering University in 2005. Currently he is the Senior Lecturer at the Electric Equipment and Industrial Electronics sub-department of Moscow Polytechnic University, author and coauthor of more than 40 publications. His research interests are microcontroller systems, light emitting diodes

Lyudmila O. Mokretsova, Associate Professor, Ph. D. in Technical Sciences. In 1978, she graduated from the Moscow Institute of Steel and Alloys (MISIS). At present, she is Associate Professor of the Automatic Design sub-department of NITU MISIS, prize winner of the Golden Names of Higher Education 2018 contest in nomination of Introduction of Innovative Teaching Techniques. Her research interests: 3D modelling in light design

Arkady A. Skvortsov, Doctor of Physical and Mathematical Sciences. Currently he is a Head of subdepartment of Moscow Polytechnic University, author and co-author of more than 150 articles and monographs on semiconductor material studies and problems of degrading of metallisation systems and contacts in micro and nano electronic systems

Abstract:

In this work, a computerized measuring device is developed and created for non-destructive measurement of the concentration distribution of an electrically active impurity in p–n structures. The concentration distribution is measured by recording the parameters of the barrier capacity when a small two-frequency signal is exposed to the structure under the study. The device makes it possible to study the concentration profile of p–n structures in the area of the location of quantum wells with a depth resolution of up to 3–4 atomic layers in the range of changes in the width of the spatial charge region under the influence of a constant bias voltage. The measurement results are processed, and the measuring device is controlled by a microcontroller.

References:

1. Manyakhin, F. I., Varlamov, D. O., Kuksa, V. V. and Mokretsova, L.O. Mechanism and Regularity for Luminous Flux Decreasing of Efficient Small Powered LEDs Based on GaN/InGaN Structures at High Current Density // Light & Engineering, 2024, Vol. 32, # 3, pp. 20–29.
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Keywords

DOI: https://doi.org/10.33383/2023-091

Article in RUS:
Svetotekhnika # 3, 2024, pp. 35–39

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