Light & Engineering 32 (4) 2024

Volume 32
Date of publication 08/15/2024
Pages 59–66

Non-Destructive Method and Device for Measurements of Profile of Doping for the Active Region of the p–n Structure LED Crystals L&E, Vol.32, No.4, 2024

Articles authors:

Fedor I. Manyakhin, Dmitry O. Varlamov, Lyudmila O. Mokretsova, Arkady A. Skvortsov

Fedor I. Manyakhin, Doctor of Physical and Mathematical Sciences, Professor. He graduated from the Moscow Institute of Electronics and Mathematics in 1973. Currently, he is a professor at Moscow Polytechnic University, he is the author and co-author of over 180 publications. He has been awarded a Certificate of Honour by the Ministry of Education and Science of the Russian Federation and was a laureate of the Golden Names of Higher Education 2018 competition in the category For Contribution to Science and Higher Education. His research interests include semiconductor electronics and the physics of semiconductor devices

Dmitry O. Varlamov, engineer. He graduated from Moscow State Technical University “MAMI” in 2005 and is currently a Senior Lecturer in the Department of Electrical Equipment and Industrial Electronics at Moscow Polytechnic University. He is the author and coauthor of more than 40 publications. His research interests include microcontroller systems and LED technologies

Lyudmila O. Mokretsova, Ph. D. in Engineering, Associate Professor. She graduated from the Moscow Institute of Steel and Alloys (MISIS) in 1978 and is currently an Associate Professor in the Department of Computer-Aided Design and Engineering at the National University of Science and Technology MISIS. She was a laureate of the Golden Names of Higher Education 2018 competition in the category For the Implementation of Innovative Teaching Methods. Her research interests include three-dimensional modelling in lighting design

Arkady A. Skvortsov, Doctor of Physical and Mathematical Sciences. He is Head of Department at Moscow Polytechnic University and the author or co-author of more than 150 scientific articles and monographs on semiconductor materials science, as well as on the degradation of metallization systems and contact structures in micro- and nanoelectronics

Abstract:

In this work, a computerized measuring device is developed and created for non-destructive measurement of the concentration distribution of an electrically active impurity in p–n structures. The concentration distribution is measured by recording the parameters of the barrier capacity when a small two-frequency signal is exposed to the structure under the study. The device makes it possible to study the concentration profile of p–n structures in the area of the location of quantum wells with a depth resolution of up to 3–4 atomic layers in the range of changes in the width of the spatial charge region under the influence of a constant bias voltage. The measurement results are processed, and the measuring device is controlled by a microcontroller.

References:

1. Manyakhin, F. I., Varlamov, D. O., Kuksa, V. V. and Mokretsova, L.O. Mechanism and Regularity for Luminous Flux Decreasing of Efficient Small Powered LEDs Based on GaN/InGaN Structures at High Current Density // Light & Engineering, 2024, Vol. 32, # 3, pp. 20–29.
2. Manyakhin, F.I. Instability of the distribution of concentration of electrically active centres near the p-n junction of AlGaN/InGaN/GaN LED structures with quantum wells during direct current flow // Izv. VUZov, 2005, Materialy elektronnoy tekhniki, No. 3, pp. 84‒88.
3. Blood, P., Orton, J.W. Methods for Measuring the Electrical Properties of Semiconductors, Part 1 // Zarubezhnaya radioelektronika, 1981, No. 1, pp. 3‒50.
4. Berman, L.S. Capacitive Methods for Studying Semiconductors // AN SSSR, Phys.-techn. in-t im. A.F. Ioffe, Nauka, Leningr. otdelenie, Leningrad,1972, [in Russian].
5. Berman, L. S., Lebedev, A.A. Capacitive Spectroscopy of Deep Centres in Semiconductors // Nauka, Leningrad, 1981, [in Russian].
6. Berman, L.S. Purity Control of Semiconductors by the Method of Capacitance Transient Spectroscopy // Electronic Integral Systems,1995, [in Russian].
7. Patent RU2393584C1, Russia.
8. Patent SU1150589A1, Russia.
9. Shumsky, I.A. Measuring capacitance-voltage characteristics of semiconductor devices, choice of a modern budget solution // Kontrol’no-izmeritel’nyye pribory i sistemy, 2017, No. 2, pp. 10‒16.
10. Sukegavwa, T., Ogita, M. Two-frequency method for measuring impurity profiles // Rev/ Sci. Instrum., 1979, No. 50, pp. 41‒45.

Keywords

DOI: https://doi.org/10.33383/2023-091

Article in RUS:
Svetotekhnika # 3, 2024, pp. 35–39

Buy