Content
Number of images - 6
Tables and charts - 1
Mechanism and Regularity for Luminous Flux Decreasing of Efficient Small Powered LEDs Based on GaN/InGaN Structures at High Current Density L&E, Vol.32, No.3, 2024

Light & Engineering 32 (3) 2024

Volume 32
Date of publication 06/13/2024
Pages 20–29

Purchase PDF - ₽600

Mechanism and Regularity for Luminous Flux Decreasing of Efficient Small Powered LEDs Based on GaN/InGaN Structures at High Current Density L&E, Vol.32, No.3, 2024
Articles authors:
Fedor I. Manyakhin, Dmitry O. Varlamov, Vitaliy V. Kuksa, Lyudmila O. Mokretsova

Fedor I. Manyakhin, Doctor of Physical and Mathematical Sciences, Professor. He graduated from the Moscow Institute of Electronics and Mathematics in 1973. Currently, he is a professor at Moscow Polytechnic University, he is the author and co-author of over 180 publications. He has been awarded a Certificate of Honour by the Ministry of Education and Science of the Russian Federation and was a laureate of the Golden Names of Higher Education 2018 competition in the category For Contribution to Science and Higher Education. His research interests include semiconductor electronics and the physics of semiconductor devices

Dmitry O. Varlamov, engineer. He graduated from Moscow State Technical University “MAMI” in 2005 and is currently a Senior Lecturer in the Department of Electrical Equipment and Industrial Electronics at Moscow Polytechnic University. He is the author and coauthor of more than 40 publications. His research interests include microcontroller systems and LED technologies

Vitaliy V. Kuksa, Master degree. He graduated with honours from the Moscow Polytechnic University (MPU) in 2022. At present, he is the Senior lecturer and postgraduate student at MPU, specialising in Electrical Power Engineering and Electrical Engineering

Lyudmila O. Mokretsova, Ph. D. in Engineering, Associate Professor. She graduated from the Moscow Institute of Steel and Alloys (MISIS) in 1978 and is currently an Associate Professor in the Department of Computer-Aided Design and Engineering at the National University of Science and Technology MISIS. She was a laureate of the Golden Names of Higher Education 2018 competition in the category For the Implementation of Innovative Teaching Methods. Her research interests include three-dimensional modelling in lighting design

Abstract:
Measurements of the luminous flux of efficient low-power green light emitting diodes based on In-GaN/GaN hetero-structures at a stable current density (2.5–3.5) times higher than the nominal one have been carried out. On the basis of the ABC model and the mechanism of subthreshold formation of point defects, an analytical dependence of the luminous flux decline in time has been obtained, modelling the behaviour of the corresponding experimental dependences with a high degree of accuracy. It is established that the degradation of LEDs luminous flux at a fixed direct current follows the inverse square law of the operating time. The initial period of rapid degradation, associated with changes in the state of indium micro-inclusions in the Inx-Ga1‑xN solid solution, was revealed
References:
1. Richman, E. Determining the service life of LEDs [Opredeleniye sroka sluzhby svetodiodov] // Electronic components (Lighting engineering and optoelectronics), 2012, # 1, pp. 42–44.
2. Manyakhin, F.I., Kovalev, A.N., Yunovich, A.E. Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents // MRS Internet journal of nitride semiconductоr, 1998, Vol. 3(53). DOI: 10.1557/S1092578300001253.
3. Sawyer, S.L. Rumyantsev, S.L., Shur, M.S. Degradation of AlGaN-based ultraviolet light emitting diodes // Solid-State Electronics, 2008, Vol. 52, pp. 968–972.
4. Herzog, A., Benkner, S., Zandi, B. at all. Lifetime Prediction of Current and Temperature Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light Emitting Diodes // March 2023, IEEE Access 11:19928–19940. DOI: 10.1109/ACCESS.2023.3249478.
5. Huang, J. et al. Rapid Degradation of Mid-Power White-Light LEDs in Saturated Moisture Conditions // IEEE Transactions on Device and Materials Reliability, 2015, Vol. 15, # 4, pp. 468–475.
6. Life after life: TM‑21 predicts // Semiconductor lighting technology, 2012, # 1, pp. 52–54, in Russian.
7. Kovalev, A.N., Manyakhin, F.I., Kudryashov, V.E., Turkin, A.N., Yunovich, A.E. Changes in the luminescent electrical properties of LEDs made from InGaN/AlGaN/GaN heterostructures during long-term operation [Izmeneniye lyuminestsentnykh elektricheskikh svoystv svetodiodov iz geterostruktur InGaN/AlGaN/GaN pri dlitel’noy ekspluatatsii] // FTP, 1999, Vol. 33, # 2, pp. 224–232.
8. Varlamov, D.O., Manyakhin, F.I., and Skvortsov, A.A. The Interrelation between Temperature and Power Supply Modes of Low Power High Efficiency Light Emitting Diodes // Light & Engineering, 2023, Vol. 31, # 3, pp. 91–99.
9. Hopkins, M.A., Allsopp, W.E., Kappers, M.J., Oliver, R.A., Humphreys, C.J. The ABC model of recombination reinterpreted: impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes // J. Appl. Phys. 2017, Vol. 122, 234505.
10. Dai, Q., Shan, Q., Wang, J. et al. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light emitting diodes // Appl. Phys. Lett. 2010, Vol. 97, 133507. URL: https://doi.org/10.1063/1.3493654 (date of ddresing 22.03.2023).
11. Manyakhin, F. I, Vattana, A.B., and Mokretsova, L.O. Application of the Sah-Noyce-Shockley Recombination Mechanism to the Model of the Voltage-Current Relationship of LED Structures with Quantum Wells // Light & Engineering, 2020, Vol. 28, # 5, pp. 31–38.
12. Manyakhin, F.I. and Mokretsova, L.O. The Regularity of the Decrease in the Quantum Yield of Quantum-Wells LEDs at the Long-Term Current Flow from the ABC Model Position // Light & Engineering, 2021, Vol. 29, # 5(2), pp. 62–70.
13. Manyakhin, F.I. and Mokretsova, L.O. Physical-Mathematical Model of the Internal Quantum Efficiency Dependence on the Current of LEDs with Quant um Wells // Light & Engineering, 2020, Vol. 28, # 6, pp. 9–16.
14. Pikus, G.E. Fundamentals of the theory of semiconductor devices [Osnovy teorii poluprovodnikovykh priborov] / Moscow: Nauka, 1965, 448 p.
15. NSMArchive: Physical Properties of Semiconductors / URL: http://www. ioffe.rssi.ru/SVA/NSM/Semicond/ (date of addressing: 22.03.2023).
16. Manyakhin, F.I. Instability of the distribution of the concentration of electrically active centres near the p-n junction of AlGaN/InGaN/GaN LED structures with quantum wells or direct current rollers [Nestabil’nost’ raspredeleniya kontsentratsii elektricheski aktivnykh tsentrov vblizi p-n perekhoda svetodiodnykh struktur AlGaN/InGaN/GaN s kvantovymi yamami ili rolikami postoyannogo toka] // Izv. Universities. Electronic materials, 2005, # 3, pp. 84–88.
Keywords

Buy

Recommended articles