Light & Engineering 32 (3) 2024

Volume 32
Date of publication 06/13/2024
Pages 20–29

Mechanism and Regularity for Luminous Flux Decreasing of Efficient Small Powered LEDs Based on GaN/InGaN Structures at High Current Density L&E, Vol.32, No.3, 2024

Articles authors:

Feodor I. Manyakhin, Dmitry O. Varlamov, Vitaliy V. Kuksa, Lyudmila O. Mokretsova

Feodor I. Manyakhin, Doctor of Physical and Mathematical Sciences, Professor. In 1973, he graduated from the Moscow Institute of Electronic Engineering (MIEM). At present, he is Professor of the Automatic Design sub-department of NITU MISiS, author and coauthor of more than 160 publications. Dr. Manyakhin awarded with diploma of the Ministry of Education and Science of Russia, prize winner of the Golden Names of Higher Education 2018 contest in nomination of Contribution to Science and Higher Education. His research interests are semiconductor electronics, physics of semiconductor devices

Dmitry O. Varlamov, engineer. He graduated from Moscow Machinery Engineering University in 2005. Currently he is the Senior Lecturer at the Electric Equipment and Industrial Electronics sub-department of Moscow Polytechnic University, author and coauthor of more than 40 publications. His research interests are microcontroller systems, light emitting diodes

Vitaliy V. Kuksa, Master degree. He graduated with honours from the Moscow Polytechnic University (MPU) in 2022. At present, he is the Senior lecturer and postgraduate student at MPU, specialising in Electrical Power Engineering and Electrical Engineering

Lyudmila O. Mokretsova, Associate Professor, Ph. D. in Technical Sciences. In 1978, she graduated from the Moscow Institute of Steel and Alloys (MISIS). At present, she is Associate Professor of the Automatic Design sub-department of NITU MISIS, prize winner of the Golden Names of Higher Education 2018 contest in nomination of Introduction of Innovative Teaching Techniques. Her research interests: 3D modelling in light design

Abstract:

Measurements of the luminous flux of efficient low-power green light emitting diodes based on In-GaN/GaN hetero-structures at a stable current density (2.5–3.5) times higher than the nominal one have been carried out. On the basis of the ABC model and the mechanism of subthreshold formation of point defects, an analytical dependence of the luminous flux decline in time has been obtained, modelling the behaviour of the corresponding experimental dependences with a high degree of accuracy. It is established that the degradation of LEDs luminous flux at a fixed direct current follows the inverse square law of the operating time. The initial period of rapid degradation, associated with changes in the state of indium micro-inclusions in the Inx-Ga1‑xN solid solution, was revealed

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Keywords

DOI: https://doi.org/10.33383/2023-027

Article in RUS:
Svetotekhnika # 6, 2023, pp. 68–75

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