1. Nakamura S., Iwasa M.S. Method of manufacturing p-type compound semiconductors / Patent N5306662. Apr.1994. Japan. 2. Amano H., Akasaki I. et.al. Method for producing a luminous element of III-group nitride / Patent N5496766. Mar. 1996. Japan. 3. Smidt N.M., Usikov A.S., Shabuvina E.I., Chernyakov A.E., Kurin S. Yu., Makarov Yu.N., Khelava Kh.I., Panchenko B.P. Studying of Mechanisms Responsible for Degradation of Efficiency of Light Emitting Diodes Based on Group III Nitrides [Izucheniye mekhanizmov, otvetstvennykh za degradatsiyu effektivnosti svetodiodov na osnove nitridov tretyey gruppy] // Nauchno-tekhnickeskiy vestnik informatsionnykh tekhnologiy, mekhaniki i optiki, 2015, Vol. 15, # 1, pp. 46–53. 4. Yunovich A.E., Kovalev A.N., Kudryashov V.E., Manyakhin F.I., Turkin A.N. Aging of InGaN/AlGaN/GaN light emitting diodes // MRS Online Proceeding Library. 1997, Vol. 482, January. DOI: 10.1557/PROC‑482–1041 5. Kudryashov V.E., Mamakin S.S., Turkin A.N., Yunovich A.E., Kovalev A.N., Manyakhin F.I. Dependence of aging on homogeneities in InGaN/AlGaN/GaN lightemitting diodes / Materials Research Society Symposium – Proceedings. The 1999 MRS Fail Meeting Symposium W’GaN and Related Alloys’. Boston, MA, USA, 2000. 6. Voytsekhovsky, A.V., Gorn D.I. Recombination Mechanisms in InGaN/GaN Structures with Quantum Wells at High Levels of Excitation [Mekhanizmy rekombinatsii v strukturakh InGaN/GaN s kvantovymi yamami pri vysokikh urovnyakh vozbuzhdeniya] // Izvestiya vuzov. Fizika, 2015, Vol. 58, Issue 8–2, pp. 171–173. 7. Yang S.-C., Lin P., Wang C.-P., Huang S.B., Chen C.-L., Chiang P.-F., Lee A.-T., Chu M.-TT. Failure and degradation mechanisms of light-power white light emitting diodes // Microelectronics Reliability, 2010, Vol. 550, pp. 959–964. 8. Yung K.S., Liem H., Choy H.S., Lun W.K. Degradation mechanism beyond self-heating power light-emitting diodes // J. Appl. Phys., 2011, Vol. 109, 094509. DOI: 10.1063/1.3580264. 9. Meneghesso G., Meneghini M., Zanoni E. Recent results on the degradation of white LEDs for lighting // J. Phys. D: Appl. Phys., 2010, Vol. 43(35), 354007. DOI: 10.1088/0022–3727/43/35/354007 10. Piva F., Santi C. De., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M. Modeling the degradation mechanisms of AlGaN-based UV–C LEDs: from injection efficiency to mid-gap state generation // Photonic Research. – 2020, Vol. 8, # 11, pp. 786–179. 11. Manyakhin F.I., Naimi E.K., Rabinovich O.I., Sushkov V.P. Dynamic Capacitance Method of Measurement of Concentration of Immobile Charge Centres in AIIIBVType Semiconductor Materials under Ultrasound Impact [Dinamicheski-emkostnoy metod izmereniya kontsentratsii nepodvizhnykh zaryadovykh tsentrov v poluprovodnikovykh materialakh tipa AIIIBV, podvergaemykh ultrazvukovomu vozdeystviyu] // Zavodskaya laboratoriya. Diagnostika materialov, 2006, Vol. 72, # 5, pp. 20–25. 12. Naimi E.K., Nikiforov S.G., Rabinovich O.I., Sushkov V.P. The Impact of Ultrasound Vibration on Degradation of Light-emitting Diodes [Vliyaniye ultrazvukovoy vibratsii na degradatsiyu svetoizluchayushchikh diodov] // Izvestiya vuzov. Materialy elektronnoy tekhniki, 2009, Vol. 1, pp. 86–92. 13. Manyakhin F.I. Mechanism and Pattern of Lowering of Luminous Flux of LEDs Based on AlGaN/In-GaN/GaN Structures with Quantum Wells with Continuous Flow of Forward Current of Different Density [Mekhanizm i zakonomernost snizheniya svetovogo potoka svetodiodov na osnove struktur AlGaN/InGaN/GaN s kvantovymi yamami pri dlitelnom protekanii pryamogo toka razlichnoy plotnosti] // FTP, 2018, Vol. 52, # 3, pp. 378–384. 14. Dai O., Shan Q., Wang J., Chhajed S., Cho J., Shubert E.F. Crawford M.H., Koleske D.D., Kim M.-H., Park Y. Carrier recombination mechanisms and efficiency drop in GaInN/GaN light-emitting diodes // Appl. Phys. Lett., 2010, Vol. 97, 133507. 15. Hopkins M.A., Allsopp W.E., Kappers M.J., Oliver R.A., Humphreys C.J. The ABC model of recombination reinterpreted: impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes // J. Appl. Phys., 2017, Vol. 122, 234505. 16. Manyakhin F.I., Mokretsova L.O. Physical and Mathematical Model of the Dependence of the Internal Quantum Efficiency on the Current of LEDs with Quantum Wells // Light & Engineering, 2020, Vol. 28, # 5, pp. 9–16. 17. Manyakhin, F.I., Vattana, A.B., Mokretsova, L.O. Application of the Shockley-Noyce-Shah Recombination Mechanism to the Model of Voltage-Current Relationship of LED Structures with Quantum Wells // Light & Engineering, 2020, Vol. 28, # 5, pp. 31–38. 18. Manyakhin F.I. The Effect of LED Operation Modes on the Defect Formation Process in the p-n Junction Area and Reduction of Quantum Yield [Vliyaniye rezhimov ekspluatatsii svetodiodov na protsess defektoobrazovaniya v oblasti p-n perekhoda i snizheniye kvantovogo vykhoda] // Izvestiya vuzov. Materialy elektronnoy tekhniki, 2010, Vol. 2, pp. 54–57. 19. Vikulin I.M., Irkha V.I., Korobitsyn B.V., Gorbachyov V.E. Patterns of LED Degradation [Zakonomernosti degradatsii svetoizluchayushchikh diodov] // Tekhnologii i konstruirovaniye v elektronnoy apparature, 2004, Vol. 2, pp. 55–56. 20. Meneghini M., Trevisanello L-R, Zahner T., Strauss U., Meneghesso G., Zanoni E. High-Temperature degradation of GaN LEDs related to passivation // IEEE Transactions on Electron Dev, 2006, Vol. 53, # 12, pp. 2982–2986. 21. Meneghesso G., Levada S., Pierobon R., Rampazzo F., Zanoni E., Cavalini A., Castalini A., Scamareio G., Du S., Eliashevich L. Degradation mechanisms on GaNbased LEDs after acselerfted DC current aging / Digest. International Electron Devices Meeting, Dec. 8, 2002, pp. 103–105. DOI: 10.1109/IEDM.2002.1175789 22. Vasiljeva E.D., Chernyakov A.E., Snegov F.M., Smidt N.M., Zakgeim A.L., Yakimov E.B. Some common phenomena of InGaN/GaN based blue light emitting diode degradation // Light & Engineering, 2007, Vol. 15, # 4, pp. 53–56. 23. Goncharova Yu.S., Garipov I.F., Soldatkin V.S. Accelerated Durability Tests of Semiconductor Light Sources [Uskorennyye ispytaniya poluprovodnikovykh istochnikov sveta na dolgovechnost] // Elektronika, izmeritelnaya tekhnika, radiotekhnika i svyaz, 2013, Vol. 2 (28), pp. 51–53. 24. Goryunov N.N., Manyakhin F.I., Klebanov M.P., Lukashev N.V. Impulse Three-Frequency Method of Measuring of Chrged Centre Parameters in Spatial Charge Region of Semiconductor Structures [Impulsnyi tryokhchastotnyi metod izmereniya parametrov zaryazhennykh tsentrov v oblasti prostranstvennogo zaryada poluprovodnikovykh struktur] // Pribory i sistemy upravleniya, 1999, Vol. 10, pp. 46–49. 25. Manyakhin F.I. The Nature of Resistance of the Compansated Layer and Recombination Mechanisms in LED Structures [Priroda soprotivleniya kompensirovannogo sloya i mekhanizmy rekombinatsii v svetodiodnykh strukturakh] // Izvestiya vuzov. Materialy elektronnoy tekhniki, 2006, Vol. 4, pp. 20–25. 26. Manyakhin F.I., Mokretsova L.O. Modeling the energy structure of a GaN p-i-n junction // Russian Microelectronics, 2018, Vol. 47, pp. 619–623. 27. SahT., Noyce R.N., Shockley W. Carrier Generation and Recombination in p-n Junctions and p-n Junction Characteristics // Proc. IRE, 1957, Vol. 45, pp. 1228–1243. 28. Shockley W. The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors // Belt Syst. Tec. J., 1949, Vol. 28, pp. 435–489. 29. NSM Archive. Physical Properties of Semiconductors. URL: http://www. ioffe.rssi.ru/SVA/NSM/Semicond/ (date of reference: 28.01.2021).
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